Semiconductor structure and method of forming the same

ABSTRACT

A method of forming a semiconductor structure includes forming a second III-V compound layer over a first III-V compound layer, wherein a carrier channel is located between the first III-V compound layer and the second III-V compound layer. The method further includes forming a source feature and a drain feature over the second III-V compound layer. The method further includes forming a gate dielectric layer over the second III-V compound layer, wherein the gate dielectric layer is over a top surface of the source feature and over a top surface of the drain feature. The method further includes treating a portion of the gate dielectric layer with fluorine, wherein treating the portion of the gate dielectric layer comprises performing an implantation process using at least one fluorine-containing compound. The method further includes forming a gate electrode over the portion of the gate dielectric layer.

PRIORITY CLAIM

The present application is a continuation of U.S. application Ser. No.13/297,525, filed Nov. 16, 2011, which claims priority of U.S.Provisional Application No. 61/553,510, filed Oct. 31, 2011, all ofwhich are incorporated herein by reference in their entireties.

TECHNICAL FIELD

This disclosure relates generally to a semiconductor structure and amethod of forming a semiconductor structure.

BACKGROUND

In semiconductor technology, due to their characteristics, GroupIII-Group V (or III-V) semiconductor compounds are used to form variousintegrated circuit devices, such as high power field-effect transistors,high frequency transistors, or high electron mobility transistors(HEMTs). A HEMT is a field effect transistor incorporating a junctionbetween two materials with different band gaps (i.e., a heterojunction)as the channel instead of a doped region, as is generally the case formetal oxide semiconductor field effect transistors (MOSFETs). Incontrast with MOSFETs, HEMTs have a number of attractive propertiesincluding high electron mobility, the ability to transmit signals athigh frequencies, etc.

From an application point of view, enhancement-mode (E-mode) HEMTs havemany advantages. E-mode HEMTs allow elimination of negative-polarityvoltage supply, and, therefore, reduction of the circuit complexity andcost. Despite the attractive properties noted above, a number ofchallenges exist in connection with developing III-V semiconductorcompound-based devices. Various techniques directed at configurationsand materials of these III-V semiconductor compounds have beenimplemented to try and further improve transistor device performance.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure may be understood from the followingdetailed description and the accompanying figures. It is emphasizedthat, in accordance with the standard practice in the industry, variousfeatures are not drawn to scale. In fact, the dimensions of the variousfeatures may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 is a cross-sectional view of a semiconductor structure having ahigh electron mobility transistor (HEMT) according to one or moreembodiments of this disclosure.

FIG. 2 is a flowchart of a method of forming a semiconductor structurehaving a HEMT according to one or more embodiments of this disclosure.

FIGS. 3 to 8 are cross-sectional views of a semiconductor structurehaving a HEMT at various stages of manufacture according to oneembodiment of the method of FIG. 2.

DETAILED DESCRIPTION

The making and using of illustrative embodiments are discussed in detailbelow. It should be appreciated, however, that the disclosure providesmany applicable inventive concepts that can be embodied in a widevariety of specific contexts. The specific embodiments discussed aremerely illustrative and do not limit the scope of the disclosure.

A plurality of semiconductor chip regions is marked on the substrate byscribe lines between the chip regions. The substrate will go through avariety of cleaning, layering, patterning, etching and doping steps toform integrated circuits. The term “substrate” herein generally refersto the bulk substrate on which various layers and device structures areformed. In some embodiments, the bulk substrate includes silicon or acompound semiconductor, such as GaAs, InP, Si/Ge, or SiC. Examples ofsuch layers include dielectric layers, doped layers, polysilicon layersor conductive layers. Examples of device structures include transistors,resistors, and/or capacitors, which may be interconnected through aninterconnect layer to additional integrated circuits.

FIG. 1 is a cross-sectional view of a semiconductor structure 100 havinga high electron mobility transistor (HEMT) according to one or moreembodiments of this disclosure.

Referring to FIG. 1, the semiconductor structure 100 having a HEMT isillustrated. The semiconductor structure 100 includes a substrate 102.In some embodiments, the substrate 102 includes a silicon carbide (SiC)substrate, sapphire substrate or a silicon substrate.

The semiconductor structure 100 also includes a heterojunction formedbetween two different semiconductor material layers, such as materiallayers with different band gaps. For example, the semiconductorstructure 100 includes a non-doped narrow-band gap channel layer and awide-band gap n-type donor-supply layer. In at least one embodiment, thesemiconductor structure 100 includes a first III-V compound layer (orreferred to as a channel layer) 104 formed on the substrate 102 and asecond III-V compound layer (or referred to as a donor-supply layer) 106formed on the channel layer 104. The channel layer 104 and thedonor-supply layer 106 are compounds made from the III-V groups in theperiodic table of elements. However, the channel layer 104 and thedonor-supply layer 106 are different from each other in composition. Thechannel layer 104 is undoped or unintentionally doped (UID). In thepresent example of the semiconductor structure 100, the channel layer104 includes a gallium nitride (GaN) layer (also referred to as the GaNlayer 104). The donor-supply layer 106 includes an aluminum galliumnitride (AlGaN) layer (also referred to as AlGaN layer 106). The GaNlayer 104 and AlGaN layer 106 directly contact each other. In anotherexample, the channel layer 104 includes a GaAs layer or InP layer. Thedonor-supply layer 106 includes an AlGaAs layer or an AlInP layer.

The GaN layer 104 is undoped. Alternatively, the GaN layer 104 isunintentionally doped, such as lightly doped with n-type dopants due toa precursor used to form the GaN layer 104. In one example, the GaNlayer 104 has a thickness in a range from about 0.5 microns to about 10microns.

The AlGaN layer 106 is intentionally doped. In one example, the AlGaNlayer 106 has a thickness in a range from about 5 nanometers (nm) toabout 50 nm.

The band gap discontinuity exists between the AlGaN layer 106 and theGaN layer 104. The electrons from a piezoelectric effect in the AlGaNlayer 106 drop into the GaN layer 104, creating a very thin layer 108 ofhighly mobile conducting electrons in the GaN layer 104. This thin layer108 is referred to as a two-dimensional electron gas (2-DEG), forming acarrier channel (also referred to as the carrier channel 108). The thinlayer 108 of 2-DEG is located at an interface of the AlGaN layer 106 andthe GaN layer 104. Thus, the carrier channel has high electron mobilitybecause the GaN layer 104 is undoped or unintentionally doped, and theelectrons can move freely without collision or with substantiallyreduced collisions with impurities.

The semiconductor structure 100 also includes a source feature and adrain feature disposed on the AlGaN layer 106 and configured toelectrically connect to the carrier channel 108. Each of the sourcefeature and the drain feature comprises a metal feature 112. In oneexample, the metal feature 112 is free of Au and comprises Al, Ti, orCu.

The semiconductor structure 100 further includes a dielectric cap layer110 disposed on a top surface of the AlGaN layer 106 not occupied by themetal features 112. The dielectric cap layer 110 further includes anopening that exposes a portion of the AlGaN layer 106 for a gateelectrode formation. The dielectric cap layer 110 protects theunderlying AlGaN layer 106 from damage in the following process havingplasma.

The semiconductor structure 100 further includes isolation regions 114in the first III-V compound layer 104 and the second III-V compoundlayer 106. The isolation regions 114 isolate the HEMT in the structure100 from other devices in the substrate 102. In one example, theisolation region 114 includes a doped region with species of oxygen ornitrogen.

The semiconductor structure 100 further includes a gate dielectric layer119 deposited on the dielectric cap layer 110 and top surfaces of thesource feature and the drain feature. The gate dielectric layer 119 isalso disposed along an interior surface of the opening and on theexposed portion of the AlGaN layer 106. In one example, the gatedielectric layer 119 has a thickness in a range from about 3 nm to about20 nm. In some examples, the gate dielectric layer 119 comprises siliconoxide, silicon nitride, gallium oxide, aluminum oxide, scandium oxide,zirconium oxide, lanthanum oxide or hafnium oxide. Furthermore, the gatedielectric layer 119 includes a fluorine segment 122 within the openingof the dielectric cap layer 110 on the exposed portion of the AlGaNlayer 106.

In some embodiments, the semiconductor structure 100 further includes aprotection layer (not shown). The protection layer is disposed on topsurfaces of the metal features 112 and under the gate dielectric layer119. The protection layer further includes an opening that aligns withthe opening in the dielectric cap layer 110. The combined opening of theopening in the protection layer and the opening in the dielectric caplayer 110 exposes the portion of the AlGaN layer 106 for the gateelectrode formation. The protection layer covers the source feature andthe drain feature, and prevents the source feature and the drain featurefrom exposure during an annealing process in the formation of theisolation regions 116.

The semiconductor structure 100 also includes a gate electrode 128disposed on the opening over AlGaN layer 106 between the source anddrain features. The gate electrode 128 includes a conductive materiallayer configured for voltage bias and electrical coupling with thecarrier channel 108. In various examples, the conductive material layerincludes a refractory metal or its compounds, e.g., titanium (Ti),titanium nitride (TiN), titanium tungsten (TiW) and tungsten (W). Inanother example, the conductive material layer includes nickel (Ni),gold (Au) or copper (Cu). In one example, at least a portion of the gateelectrode 128 is disposed on fluorine segment 122 of the gate dielectriclayer 119 in the opening over the AlGaN layer 106.

The semiconductor structure 100 also includes a depletion region 126 inthe carrier channel 108 under the opening in the dielectric cap layer110. The carrier channel 108 becomes normally-off because of thedepletion region 126. A positive gate voltage should be applied to turnon the carrier channel 108 of this HEMT. This HMET is also called anenhanced-mode HEMT that is opposite to a depletion-mode HEMT. Thedepletion-mode HEMT has a normally-on carrier channel and a negativegate voltage should be applied to turn off the carrier channel.

The semiconductor structure 100 further includes a fluorine region 124embedded in AlGaN layer 106 under the opening (namely under the gateelectrode 128). A majority of the fluorine region 124 overlaps thefluorine segment 122 in the gate dielectric layer 119. The fluorineatoms in the fluorine region 124 provide strong immobile negativecharges and effectively deplete the electrons in depletion region 126.

In the above described embodiments, the gate electrode 128, thesource/drain features, and the carrier channel 108 in the GaN layer 104are configured as a transistor. When a voltage is applied to the gatestack, a device current of the transistor could be modulated.

FIG. 2 is a flowchart of a method 200 of forming a semiconductorstructure having a HEMT according to one or more embodiments of thisdisclosure. Referring now to FIG. 2, the flowchart of the method 200, atoperation 201, a first III-V compound layer is provided. The first III-Vcompound layer is formed on a substrate. Next, the method 200 continueswith operation 202 in which a second III-V compound layer is epitaxiallygrown on the first III-V compound layer. The method 200 continues withoperation 203 in which a source feature and a drain feature are formedon the second III-V compound layer. The method 200 continues withoperation 204 in which a gate dielectric layer is deposited on a portionof the second III-V compound layer. The method 200 continues withoperation 205 in which the gate dielectric layer on the portion of thesecond III-V compound layer is treated with fluorine. The method 200continues with operation 206 in which a gate electrode is formed on thetreated gate dielectric layer between the source feature and the drainfeature. It should be noted that additional processes may be providedbefore, during, or after the method 200 of FIG. 2.

FIGS. 3 to 8 are cross-sectional views of the semiconductor structure100 having a HEMT at various stages of manufacture according to variousembodiments of the method 200 of FIG. 2. Various figures have beensimplified for a better understanding of the inventive concepts of thepresent disclosure.

Referring to FIG. 3, which is an enlarged cross-sectional view of aportion of a substrate 102 of a semiconductor structure 100 afterperforming operations 201, 202 and 203. In some embodiments, thesubstrate 102 includes a silicon carbide (SiC) substrate, sapphiresubstrate or a silicon substrate. A first III-V compound layer 104, alsoreferred to as a channel layer, is grown on the substrate 102. In theembodiment of FIGS. 2-8, the first III-V compound layer 104 refers to agallium nitride (GaN) layer (also referred to as the GaN layer 104). TheGaN layer 104 can be epitaxially grown by metal organic vapor phaseepitaxy (MOVPE) using gallium-containing precursor andnitrogen-containing precursor. The gallium-containing precursor includestrimethylgallium (TMG), triethylgallium (TEG), or other suitablechemical. The nitrogen-containing precursor includes ammonia (NH₃),tertiarybutylamine (TBAm), phenyl hydrazine, or other suitable chemical.In the embodiment of FIGS. 2-8, the GaN layer 104 has a thickness in arange from about 0.5 micron to about 10 microns. In other embodiments,the first III-V compound layer 104 may include a GaAs layer or InPlayer.

A second III-V compound layer 106, also referred to as donor-supplylayer, is grown on first III-V compound layer 104. An interface isdefined between the first III-V compound layer 104 and the second III-Vcompound layer 106. A carrier channel 108 of 2-DEG is located at theinterface. In at least one embodiment, the second III-V compound layer106 refers to an aluminum gallium nitride (AlGaN) layer (also referredto as the AlGaN layer 106). In the embodiment of FIGS. 2-8, the AlGaNlayer 106 is epitaxially grown on the GaN layer 104 by MOVPE usingaluminum-containing precursor, gallium-containing precursor, andnitrogen-containing precursor. The aluminum-containing precursorincludes trimethylaluminum (TMA), triethylaluminium (TEA), or othersuitable chemical. The gallium-containing precursor includes TMG, TEG,or other suitable chemical. The nitrogen-containing precursor includesammonia, TBAm, phenyl hydrazine, or other suitable chemical. In theembodiment of FIGS. 2-8, the AlGaN layer 106 has a thickness in a rangefrom about 5 nanometers to about 50 nanometers. In other embodiments,the second III-V compound layer 106 may include an AlGaAs layer, orAlInP layer.

A dielectric cap layer 110 is deposited on a top surface 107 of thesecond III-V compound layer 106. In the embodiment of FIGS. 2-8, thedielectric cap layer 110 has a thickness in a range from about 100 Å toabout 5000 Å. In some embodiments, the dielectric cap layer 110 includesSiO₂ or Si₃N_(4.) In one example, the dielectric cap layer 110 is Si₃N₄and is formed by performing a low pressure chemical vapor deposition(LPCVD) method without plasma using SiH₄ and NH₃ gases. An operationtemperature is in a range of from about 650° C. to about 800° C. Anoperation pressure is in a range of about 0.1 Torr and about 1 Torr. Thedielectric cap layer 110 protects the underlying second III-V compoundlayer 106 from damage in the following processes having plasma. Next,two openings in the dielectric cap layer 110 are defined by lithographyand etching processes to expose a portion of the second III-V compoundlayer 106.

A metal layer is deposited over the dielectric cap layer 110, overfillsthe openings and contacts the second III-V compound layer 106. Aphotoresist layer (not shown) is formed over the metal layer anddeveloped to form a feature over the openings. The metal layer notcovered by the feature of the photoresist layer is removed by a reactiveion etch (RIE) process that etches the exposed portions of the metallayer down to the underlying the dielectric cap layer 110. Metalfeatures 112 are generated after the etching process. The metal features112 are configured as the source feature or the drain feature for theHEMT. The photoresist layer is removed after the formation of the metalfeatures 112. The dielectric cap layer 110 protects the underlyingsecond III-V compound layer 106 from damage during the etching processto form metal features 112. The carriers in carrier channel 108 of 2-DEGunderlying the second III-V compound layer 106 would not be affectedduring the etching process. The electrical performances of thesemiconductor structure 100 would be positively affected. Therefore, theyield of the overall assembly could increase.

In some embodiments, the metal layer of the metal features 112 includesone or more conductive materials. In at least one example, the metallayer is free of gold (Au) and comprises titanium (Ti), titanium nitride(TiN), or aluminum copper (AlCu) alloy. In another example, the metallayer includes a bottom Ti/TiN layer, an AlCu layer overlying the bottomTi/TiN layer, and a top Ti layer overlying the AlCu layer. The formationmethods of the metal layer include atomic layer deposition (ALD) orphysical vapor deposition (PVD) processes. Without using Au in the metalfeatures 112, the method 200 could also be implemented in the productionline of integrated circuits on silicon substrate. The contaminationconcern from Au on the silicon fabrication process could be eliminated.

Next, a protection layer (not shown) is optionally deposited on topsurfaces of the metal features 112 and the dielectric cap layer 110. Insome embodiments, the protection layer includes dielectric materialssuch as SiO₂ or Si₃N_(4.) In one example, the protection layer is Si₃N₄and is formed by performing a plasma enhanced chemical vapor deposition(PECVD) method.

FIG. 4 illustrates the structure 100 after forming isolation regions 114in the first III-V compound layer 104 and the second III-V compoundlayer 106. The isolation regions 114 isolate the HEMT in the structure100 from other devices in the substrate 102. In one example, theisolation region 114 is formed by an implantation process with speciesof oxygen or nitrogen. The protection layer covers the source featureand the drain feature, and prevents the source feature and the drainfeature from exposure during an annealing process after the implantationprocess for the isolation region 114 formation.

FIG. 5 illustrates the structure 100 after forming an opening 116 in thedielectric cap layer 110 (also in the protection layer if the protectionlayer exists). A patterned mask layer (not shown) is formed on a topsurface of the dielectric cap layer 110 and an etching process isperformed to remove a portion of the dielectric cap layer 110 (alsoremove a portion of the protection layer if the protection layerexists). The opening 116 exposes a portion of the top surface 107 of thesecond III-V compound layer 106. The opening 116 is configured as alocation for the later gate electrode formation.

FIG. 6 illustrates the structure 100 after depositing a gate dielectriclayer 118 in operation 204. The gate dielectric layer 118 is depositedon the dielectric cap layer 110, along an interior surface of theopening 116 and on the exposed portion of the second III-V compoundlayer 106. The gate dielectric layer 118 is also deposited over thesource feature and the drain feature. In some embodiments, the gatedielectric layer 118 is in a thickness range from about 3 nm to about 20nm. In some examples, the gate dielectric layer 118 comprises siliconoxide, silicon nitride, gallium oxide, aluminum oxide, scandium oxide,zirconium oxide, lanthanum oxide or hafnium oxide. In one embodiment,the gate dielectric layer 118 is formed by an atomic layer deposition(ALD) method. The ALD method is based on the sequential use of a gasphase chemical process. The majority of ALD reactions use two chemicals,typically called precursors. These precursors react with a surfaceone-at-a-time in a sequential manner. By exposing the precursors to thegrowth surface repeatedly, the gate dielectric layer 118 is deposited.The ALD method provides a uniform thickness of the gate dielectric layer118 with high quality. In one example, the gate dielectric layer 118 iszirconium oxide. In some embodiments, a first precursor includestetrakis[ethylmethylamino]zirconium (TEMAZr) or zirconium chloride(ZrCl₄). In some embodiments, a second precursor includes oxygen inorder to oxidize the first precursor material to form a monolayer. Insome examples, the second precursor includes ozone (O₃), oxygen, water(H₂O), N₂O or H₂O—H₂O_(2.) In other embodiments, the gate dielectriclayer 118 is formed by a plasma enhanced chemical vapor deposition(PECVD) or a low pressure chemical vapor deposition (LPCVD).

FIG. 7 illustrates the structure 100 after treating the gate dielectriclayer 118 with fluorine (F) 120 in operation 205. The treated gatedielectric layer 119 includes a fluorine segment 122 in the opening 116on the second III-V compound layer 106. The F atoms increase thedielectric constant of the treated gate dielectric layer 119 (namely thefluorine segment 122). During the operation of the HEMT, the electronsflow in the carrier channel 108 between the source feature and the drainfeature. The electrons may inject into the gate dielectric layer 119.The F incorporation prevents the electrons trapped at the treated gatedielectric layer 119. Hence, the stability of the threshold voltage (Vt)of the HEMT in the structure 100 is improved. The treatment withfluorine (F) also forms a fluorine region 124 embedded in the secondIII-V compound layer 106. Since the patterned dielectric cap layer 110screens F atoms from penetrating into the second III-V compound layer106, the fluorine region 124 is defined underlying the opening 116. Amajority of the fluorine region 124 overlaps and underlies the fluorinesegment 122. The F atoms in the fluorine region 124 provide strongimmobile negative charges and effectively deplete the electrons in thecarrier channel 108. A depletion region 126 in the carrier channel 108is generated under the fluorine region 124. The HEMT in the structure100 is converted from a depletion-mode HEMT to an enhanced-mode HEMT.The carrier channel 108 becomes normally-off and a positive gate voltageshould be applied to turn on the carrier channel 108 for thisenhanced-mode HEMT.

In one example, the structure 100 is treated with fluorine by animplantation process. In some embodiments, a plurality of dopants inimplantation process includes F or BF₂. An energy power of theimplantation process is from about 5 Kev to about 20 Kev. A dosage ofthe dopants is in a range of about 1E12 ion/cm² to about 1E15 ion/cm².The fluorine segment 122 and the fluorine region 124 are formedsimultaneously.

In another example, the structure 100 is also treated with fluorine byan implantation process including F or BF₂. The dosage of the dopants isin a range of about 1E12 ion/cm² to about 1E15 ion/cm². However, theenergy power of the implantation process is from about 1 Kev to about 10Kev. The gate dielectric layer 118 is treated to form the fluorinesegment 122. Next, an annealing process is performed to further drive inthe F atoms to form the fluorine region 124. An operation temperature ofthe anneal process is in a range of about 400° C. to about 600° C. Inone embodiment, the fluorine region 124 is kept within the second III-Vcompound layer 106 and neither contacts the carrier channel 108 norfurther extends into the first III-V compound layer 104. Thisconfiguration prevents F atoms from penetrating into the first III-Vcompound layer 104 and prevents negative effects by the operation ofthis enhanced-mode HEMT.

In yet another example, the structure 100 is treated in a plasmaenvironment comprising CF₄. An operation power of the plasma environmentis less than about 300 W. A bias power to guide the plasma radicalstoward the structure 100 is less than about 300 W. The gate dielectriclayer 118 is treated to form the fluorine segment 122. Next, anannealing process is performed to further drive in the F atoms to formthe fluorine region 124.

FIG. 8 illustrates the structure 100 after performing operation 206,which forms a gate electrode 128 on the fluorine segment 122 of the gatedielectric layer 119. The gate electrode 128 is also above the fluorineregion 124 of the second III-V compound layer 106 overlying thedepletion region 126. In one example, a gate electrode layer isdeposited on the gate dielectric layer 119 and overfills the opening 116shown in FIG. 7. Lithography and etching processes are performed on thegate electrode layer to define the gate electrode 128 between the sourceand drain features. In some embodiments, the gate electrode 128 includesa conductive material layer that includes a refractory metal or itscompounds, e.g., titanium (Ti), titanium nitride (TiN), titaniumtungsten (TiW) and tungsten (W). In another example, the gate electrode128 includes nickel (Ni), gold (Au) or copper (Cu).

Various embodiments of the present disclosure may be used to improve theperformance of a semiconductor structure having a high electron mobilitytransistor (HEMT). For example, in conventional methods, a portion ofthe second III-V compound layer 106 is etched to form a recess for anenhanced-mode HEMT. During etching the recess, the etching uniformityamong the semiconductor chip regions on the same substrate 102 is hardto control. The electrical performances of each HEMT in the samesemiconductor chip region or the same substrate 102 could not beaccurately controlled. In this disclosure, the fluorine region 124depletes the electrons in the carrier channel 108 for an enhanced-modeHEMT. The fluorine region 124 in the opening 116 eliminates thedrawbacks in conventional methods. The fluorine-treated gate dielectriclayer 119 also improves stability of the threshold voltage (Vt) of theHEMT in the structure 100. The metal feature 112 is free of Au andcomprises Al, Ti or Cu. Without using Au in the metal feature 112, themethod 200 can be implemented in the production line of integratedcircuits on silicon substrate, because the contamination concern from Auon the silicon-Fab process is eliminated. Compared with the HEMT with Auin source/drain feature, the cost for manufacturing the HEMT accordingto the present application is reduced. Both the III-V semiconductorcompounds process and the silicon-fabrication process can be implementedin the same production line. It increases the flexibility to allocatedifferent products for the production line.

One aspect of this disclosure relates to a method of forming asemiconductor structure. The method includes forming a second III-Vcompound layer over a first III-V compound layer, wherein a carrierchannel is located between the first III-V compound layer and the secondIII-V compound layer. The method further includes forming a sourcefeature and a drain feature over the second III-V compound layer. Themethod further includes forming a gate dielectric layer over the secondIII-V compound layer, wherein the gate dielectric layer is over a topsurface of the source feature and over a top surface of the drainfeature. The method further includes treating a portion of the gatedielectric layer with fluorine, wherein treating the portion of the gatedielectric layer comprises performing an implantation process using atleast one fluorine-containing compound. The method further includesforming a gate electrode over the portion of the gate dielectric layer.

Another aspect of this description relates to a method of forming asemiconductor structure. The method includes forming an aluminum galliumnitride (AlGaN) layer over a gallium nitride (GaN) layer, wherein acarrier channel is located between the GaN layer and the AlGaN layer.The method further includes forming a source feature and a drain featureover the AlGaN layer; and forming a gate dielectric layer over the AlGaNlayer, wherein the gate dielectric layer is over a top surface of thesource feature and over a top surface of the drain feature. The methodfurther includes implanting a fluorine-containing compound into aportion of the gate dielectric layer. The method further includesforming a gate electrode over the portion of the gate dielectric layer.

Still another aspect of this description relates to a method of forminga semiconductor structure. The method includes forming a second III-Vcompound layer over a first III-V compound layer, wherein a carrierchannel is located between the first III-V compound layer and the secondIII-V compound layer. The method further includes forming a sourcefeature and a drain feature over the second III-V compound layer. Themethod further includes forming a gate dielectric layer over the secondIII-V compound layer, wherein the gate dielectric layer is over a topsurface of the source feature and over a top surface of the drainfeature, and a portion of the gate dielectric layer is in direct contactwith the second III-V compound layer. The method further includesimplanting a fluorine-containing compound into the portion of the gatedielectric layer with fluorine. The method further includes annealingthe portion of the gate dielectric layer containing thefluorine-containing compound.

Although the embodiments and its advantages have been described indetail, it should be understood that various changes, substitutions andalterations can be made herein without departing from the spirit andscope of the invention as defined by the appended claims. Moreover, thescope of the present application is not intended to be limited to theparticular embodiments of the process, machine, manufacture, andcomposition of matter, means, methods and steps described in thespecification. As one of ordinary skill in the art will readilyappreciate from the disclosure of the present invention, processes,machines, manufacture, compositions of matter, means, methods, or steps,presently existing or later to be developed, that perform substantiallythe same function or achieve substantially the same result as thecorresponding embodiments described herein may be utilized according tothe present invention. Accordingly, the appended claims are intended toinclude within their scope such processes, machines, manufacture,compositions of matter, means, methods, or steps.

What is claimed:
 1. A method of forming a semiconductor structure, themethod comprising: forming a second III-V compound layer over a firstIII-V compound layer, wherein a carrier channel is located between thefirst III-V compound layer and the second III-V compound layer; forminga source feature and a drain feature over the second III-V compoundlayer; forming a gate dielectric layer over the second III-V compoundlayer, wherein the gate dielectric layer is over a top surface of thesource feature and over a top surface of the drain feature; treating aportion of the gate dielectric layer with fluorine, wherein treating theportion of the gate dielectric layer comprises performing animplantation process using at least one fluorine-containing compound;and forming a gate electrode over the portion of the gate dielectriclayer.
 2. The method of claim 1, wherein treating the portion of thegate dielectric layer comprises performing the implantation processusing BF₂.
 3. The method of claim 1, wherein treating the portion of thegate dielectric layer comprises performing the implantation process at apower ranging from about 5 keV to about 20 keV.
 4. The method of claim1, wherein treating the portion of the gate dielectric layer comprisesperforming the implantation process using a dopant dosage ranging from1E12 ions/cm² to about 1E15 ions/cm².
 5. The method of claim 1, furthercomprising forming a dielectric cap layer over the second III-V compoundlayer.
 6. The method of claim 5, wherein forming the dielectric caplayer comprises forming the dielectric cap layer between a secondportion of the gate dielectric layer and the second III-V compoundlayer.
 7. The method of claim 1, further comprising forming a fluorineregion in the second III-V compound layer.
 8. The method of claim 7,wherein forming the fluorine region comprises forming the fluorineregion simultaneously with treating the portion of the gate dielectriclayer.
 9. The method of claim 7, wherein forming the fluorine regioncomprises forming the fluorine region sequentially with treating theportion of the gate dielectric layer.
 10. The method of claim 9, whereintreating the portion of the gate dielectric layer comprises performingthe implantation process at a power ranging from about 1 Kev to about 10Kev.
 11. The method of claim 9, wherein forming the fluorine regioncomprises performing an annealing process on the treated portion of thegate dielectric layer.
 12. The method of claim 1, wherein treating theportion of the gate dielectric layer comprises treating the portion ofthe gate dielectric layer in a plasma environment comprising CF₄. 13.The method of claim 12, wherein treating the portion of the gatedielectric layer comprises supplying a bias power of less than about 300W.
 14. The method of claim 12, further comprising annealing the treatedportion of the gate dielectric layer to form a fluorine region in thesecond III-V compound layer.
 15. A method of forming a semiconductorstructure, the method comprising: forming an aluminum gallium nitride(AlGaN) layer over a gallium nitride (GaN) layer, wherein a carrierchannel is located between the GaN layer and the AlGaN layer; forming asource feature and a drain feature over the AlGaN layer; forming a gatedielectric layer over the AlGaN layer, wherein the gate dielectric layeris over a top surface of the source feature and over a top surface ofthe drain feature; implanting a fluorine-containing compound into aportion of the gate dielectric layer; and forming a gate electrode overthe portion of the gate dielectric layer.
 16. The method of claim 15,wherein implanting the fluorine-containing compound comprises implantingthe fluorine-containing compound in the gate dielectric layer and theAlGaN layer simultaneously.
 17. The method of claim 15, furthercomprising forming a fluorine region in the AlGaN layer.
 18. The methodof claim 17, wherein forming the fluorine region comprises: implantingthe fluorine-containing compound into the gate dielectric layer; andannealing the implanted gate dielectric layer.
 19. A method of forming asemiconductor structure, the method comprising: forming a second III-Vcompound layer over a first III-V compound layer, wherein a carrierchannel is located between the first III-V compound layer and the secondIII-V compound layer; forming a source feature and a drain feature overthe second III-V compound layer; forming a gate dielectric layer overthe second III-V compound layer, wherein the gate dielectric layer isover a top surface of the source feature and over a top surface of thedrain feature, and a portion of the gate dielectric layer is in directcontact with the second III-V compound layer; implanting afluorine-containing compound into the portion of the gate dielectriclayer with fluorine; and annealing the portion of the gate dielectriclayer containing the fluorine-containing compound.
 20. The method ofclaim 19, wherein annealing the portion of the gate dielectric layerforms a fluorine-containing region in the second III-V compound layer.